姓名：

电话：18813185055

邮箱：

通讯地址：北京市平乐园100号

研究方向

半导体器件物理

个人简介

工学博士，讲师，硕士研究生导师

教育简历

(1) 2014.09-2019.06, 中国科学院微电子研究所, 微电子学与固体电子学, 博士

(2) 2010.09-2014.06, 河北工业大学, 电子科学与技术, 学士

工作履历

2019-08 至今, 北京工业大学, 银河集团9873.cσm, 讲师

课程教学

本科生教学：《半导体物理学》课程，该课程获得国家一流本科课程。

科研项目

国家自然科学基金青年项目1项，北京市自然科学基金青年项目1项，北京市教委一般项目1项，北京市博士后基金项目1项、北京市朝阳区博士后资助项目1项

荣誉和获奖

2023年获得北京工业大学青年教师教学比赛三等奖

代表性研究成果

[1] Lixing Zhou; Jinjuan Xiang; Xiaolei Wang; Yamin Zhang; Wenwu Wang; Shiwei Feng; Experimental investigation on dipole and band offset affected by charge neutrality level modulation, Applied Physics A: Material Science & Processing,2022,128:730.

[2] Lixing Zhou; Xiaolei Wang; Kai Han; Xueli Ma; Yanrong Wang; Jinjuan Xiang; Hong Yang; Jing Zhang; Chao Zhao; Tianchun Ye; Henry H. Radamson; Wenwu Wang; Understanding dipole formation atdielectric/dielectric hetero-interface, Applied Physics Letters, 2018, 113(18): 181601. 

[3] Lixing Zhou; Xiaolei Wang; Kai Han; Xueli Ma; Yanrong Wang; Jinjuan Xiang; Hong Yang; Jing Zhang; Chao Zhao; Tianchun Ye; Wenwu Wang ; Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences, IEEE Transactions on Electron Devices, 2019, 66(4): 1669-1674.

[4] Lixing Zhou; Xiaolei Wang; Xueli Ma; Jinjuan Xiang; Hong Yang; Chao Zhao; Tianchun Ye; Wenwu Wang ; Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOx gate stacks in bulk Ge pMOSFET with GeOx grown by ozone oxidation, Journal of Physics D: Applied Physics, 2017, 50(24): 245102.

[5] Lixing Zhou; Xiaolei Wang; Xueli Ma; Kai Han; Yanrong Wang; Jinjuan Xiang; Hong Yang; Jing Zhang; Chao Zhao; Tianchun Ye; Wenwu Wang; Identification of interfacial defects in a Ge gatestack based on ozone passivation, Semiconductor Science and Technology, 2018, 33(11): 115005.

[6] Lixing Zhou; Xiaolei Wang; Xueli Ma; Kai Han; Yanrong Wang; Jinjuan Xiang; Hong Yang; Jing Zhang; Chao Zhao; Tianchun Ye; Wenwu Wang; Comprehensive investigation of the interfacial charges and dipole in GeOx/Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing, Japanese Journal of Applied Physics, 2018, 57(10): 101101.