师资队伍

邢艳辉

电话:010-67392503-839

E-mail:xingyanhui@bjut.edu.cn

通讯地址:北京市朝阳区平乐园100号银河集团9873.cσm


研究方向

GaN基材料与器件,二维材料探测器及新型器件,GaN基增强型HEMT器件的研制,半导体激光器(VCSEL)。 

课程教学:

本科生:《统计物理》

研究生:《半导体检测与分析》


代表性成果

[1] Ma Haixin, Xing Yanhui*, Han Jun, et alUltrasensitive and Broad-Spectrum Photodetectors Based on InSe/ReS2 Heterostructure, ADVANCED OPTICAL MATERIALS2021,2101772

[2] Huang Xingjie, Xing, Yanhui*, Han Jun, et alThe effect of SiN (x) film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistorsAPPLIED PHYSICS EXPRESS, 2022,15:071010

[3] Cui, Boyao; Xing, Yanhui*; Han, Junet alUltrahigh responsive negative photoconductivity photodetector based on multilayer graphene/InSe van der Waals heterostructureJOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES, 2022,7:100484

[4] Zhang Yao, Xing Yanhui*, Han Jun, et al, Improving AlN crystalline quality by high-temperature ammonia-free microwave plasma chemical vapor depositionAPPLIED PHYSICS EXPRESS 2021,14,055503

[5] Xing Yanhui*Zhang YaoHan Junet alResearch of nanopore structure of Ga2O3 film in MOCVD for improving the performance of UV photoresponse. NANOTECHNOLOGY, , 2021,32,095301